Microstrip transistor oscillator with dielectric resonator stabi

Oscillators – Solid state active element oscillator – Transistors

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331 96, 331107SL, 331117FE, H03B 714

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active

044450974

ABSTRACT:
A device using a dielectric resonator with a very low temperature coefficient in a very high frequency transistor oscillator (3 to 10 GHz) so as to benefit both from the very high power available and the maximum frequency stabilization due to the resonator. In the case of a FET, the gate is connected to one end of a line coupled to a dielectric resonator at a point along the line situated at a quarter wavelength from the other end of the line, which in turn is connected through a discrete resistor to a half wavelength open circuit line. Thus, the oscillation is damped when the frequency varies from the resonant frequency of the resonator.

REFERENCES:
patent: 4149127 (1979-04-01), Murakami et al.
Wade, P. C., "Novel F.E.T. Power Oscillator" Electronics Letters, v. 14, n. 20, pp. 672-674, Sep. 28, 1978.
Podcameni, A. et al., "Stabilized FET Oscillator with Input Dielectric Resonator: Large Signal Design", Electronics Letters, v. 17, n. 1, pp. 44-45, Jan. 8, 1981.
IEEE Transactions on Microwave Theory and Techniques, vol. MTT28, No. 8, Aug. 1980, New York; O. Ishihara et al.: "A Highly Stabilized GaAs FET Oscillator using a Dielectric Resonator Feedback Circuit in 9-14 GH.sub.z ", pp. 817-824.
1979 IEEE MTT-S International Microwave Symposium Digest, 1979 New York; T. Saito et al.: "A 6 GH.sub.z Highly Stabilized GaAs FET Oscillator using a Dielectric Resonator", pp. 197-199.
IEEE Transactions on Microwave Theory and Techniques, vol. MTT27, No. 12, Dec. 1979, New York, G. D. Alley et al.: "An Ultra Low Noise Microwave Snythesizer", pp. 969-974.

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