Microstrip FET oscillator with dielectric resonator

Details Microstrip FET oscillator with dielectric resonator Microstrip FET oscillator with dielectric resonator

1979-12-20

1982-11-02

Grimm, Siegfried H.

Oscillators

With distributed parameter resonator

331117D, H03B 518

Patent

active

043575820

ABSTRACT:
A microwave oscillator including a GaAs field effect transistor having a gate electrode, a drain electrode and a source electrode and disposed on a planar substrate. An elongated gate transmission line is connected to the gate electrode of the field effect transistor and disposed on the substrate and terminated by a matching impedance. An elongated drain transmission line is connected to the drain electrode of the field effect transistor and disposed on the substrate at a predetermined angle to the gate transmission line while an elongated source transmission line is connected to the source electrode and disposed on the substrate for providing the oscillating output. A dielectric resonator is disposed within an angle formed between the gate transmission line and the drain transmission line.

REFERENCES:
patent: 4149127 (1979-04-01), Murakami et al.
patent: 4187476 (1980-02-01), Shinkawa et al.
Ishihara et al., "A Highly Stabilized GaAs FET Oscillator," IEEE Transactions on Microwave Theory and Techniques, vol. MTT-28, Aug. 1980, pp. 817-824.

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