Semiconductor device manufacturing: process – Electron emitter manufacture
Reexamination Certificate
2006-01-17
2006-01-17
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Electron emitter manufacture
C445S024000, C445S050000
Reexamination Certificate
active
06987027
ABSTRACT:
The invention comprises a method of fabricating a vacuum microtube device comprising the steps of forming a cathode layer comprising an array of electron emitters, forming a gate layer comprising an array of openings for passing electrons from the electron emitters, and forming an anode layer for receiving electrons from the emitters. The cathode gate layer and the anode layer are vertically aligned and bonded together with intervening spacers on a silicon substrate so that electrons from respective emitters pass through respective gate openings to the anode. The use of substrate area is highly efficient and electrode spacing can be precisely controlled. An optional electron multiplying structure providing secondary electron emission material can be disposed between the gate layer and the anode in the path of emitted electrons.
REFERENCES:
patent: 4149076 (1979-04-01), Albert
patent: 5079112 (1992-01-01), Berger et al.
patent: 5399860 (1995-03-01), Miyoshi et al.
patent: 5532496 (1996-07-01), Gaston
patent: 5629790 (1997-05-01), Neukermans et al.
patent: 5637539 (1997-06-01), Hofmann et al.
patent: 5701014 (1997-12-01), Berger et al.
patent: 5811916 (1998-09-01), Jin et al.
patent: 5904561 (1999-05-01), Tseng
patent: 5982095 (1999-11-01), Jin et al.
patent: 6028689 (2000-02-01), Michalicek et al.
patent: 6062931 (2000-05-01), Chuang et al.
patent: 6069599 (2000-05-01), Py et al.
patent: 6103305 (2000-08-01), Friedmann et al.
patent: 6124650 (2000-09-01), Bishop et al.
patent: 6141470 (2000-10-01), Espindola et al.
patent: 6187604 (2001-02-01), Gilton
patent: 6201631 (2001-03-01), Greywall
patent: 6283812 (2001-09-01), Jin et al.
patent: 6297063 (2001-10-01), Brown et al.
patent: 6297592 (2001-10-01), Goren et al.
patent: 6333968 (2001-12-01), Whitlock et al.
patent: 6391670 (2002-05-01), Wells et al.
patent: 6401526 (2002-06-01), Dai et al.
patent: 6411020 (2002-06-01), Yaniv et al.
patent: 6465132 (2002-10-01), Jin
patent: 6489349 (2002-12-01), Thomas et al.
patent: 6512235 (2003-01-01), Eitan et al.
patent: 6519075 (2003-02-01), Carr et al.
patent: 6525461 (2003-02-01), Iwasaki et al.
patent: 6538367 (2003-03-01), Choi et al.
patent: 6545425 (2003-04-01), Victor
patent: 5566704 (2003-05-01), Choi et al.
patent: 6574026 (2003-06-01), Jin et al.
patent: 6620640 (2003-09-01), Gilton
patent: 6653228 (2003-11-01), Choi et al.
patent: 6660959 (2003-12-01), Vallance et al.
patent: 6664727 (2003-12-01), Nakamoto
patent: 6673392 (2004-01-01), Lee et al.
patent: 6692568 (2004-02-01), Cuomo et al.
patent: 6741019 (2004-05-01), Filas et al.
patent: 2002/0137242 (2002-09-01), Gilton
patent: 2002/0146853 (2002-10-01), Karpov et al.
patent: 2002/0158342 (2002-10-01), Tuominen et al.
patent: 2003/0034244 (2003-02-01), Yasar et al.
patent: 2003/0071246 (2003-04-01), Grigorov et al.
patent: 2003/0096104 (2003-05-01), Tobita et al.
patent: 2003/0230753 (2003-12-01), Stecki et al.
patent: 1 184 888 (2002-03-01), None
Gilmour, Jr., A.S., “Microwave Tubes,” Artech House, pp. 191-313 (1986).
Brodie, I., et al., “Vacuum Microelectronics,” Advances in Electronics and Electron Physics, vol. 83, pp. 1-106 (1992).
Bower, C., et al., “On-chip vacuum microtriode using carbon nanotube field emitters,” Applied Physics Letters, vol. 80, No. 20, pp. 3820-3822 (May 20, 2002).
Rinzler, A.G., et al., “Unraveling Nanotubes: Field Emission from an Atomic Wire,” Science, vol. 269, pp. 1550-1553 (Sep. 15, 1995).
de Heer, Walt A., et al., “A Carbon Nanotube Field-Emission Electron Source,” Science, vol. 270, pp. 1179-1180 (Nov. 17, 1995).
Saito, Y., et al., “Field Emission Patterns from Single-Walled Carbon Nanotubes,” Jpn. J. Appl. Phys., vol. 36, Part 2, No. 10A, pp. L1340--L1342 (Oct. 1, 1997).
Wang, Q.H., et al., “Field emission from nanotube bundle emitters at low fields,” Appl. Phys. Lett., vol. 70, No. 24, pp. 3308-3310 (Jun. 16, 1997).
Saito, Y., et al., “Cathode Ray Tube Lighting Elements with Carbon Nanotube Field Emitters,” Jpn. J. Appl. Phys., vol. 37, Part 2, No. 3B, pp. L346-L348 (Mar. 15, 1998).
Wang, Q.H., et al., “A nanotube-based field emission flat panel display,” Applied Physics Letters, vol. 72, No. 22, pp. 2912-2913 (Jun. 1, 1998).
Bonard, Jean-Marc, et al., “Field emission from single-wall carbon nanotube films,” Applied Physics Letters, vol. 73, No. 7, pp. 918-920 (Aug. 17, 1998).
Liu, J., et al., “Fullerene Pipes,” Science, vol. 280 pp. 1253-1256 (May 22, 1998).
Li, W.Z., et al., “Large-Scale Synthesis of Aligned Carbon Nanotubes,” Science, vol. 274, pp. 1701-1703 (Dec. 6, 1996).
Tans, Sander J., et al., “Individual single-wall carbon nanotubes as quantum wires,” Nature, vol. 386, pp. 474-477 (Apr. 3, 1997).
Fan, S., et al., “Self-Oriented Regular Arrays of Carbon Nanotubes and Their Field Emission Properties,” Science, vol. 283, pp. 512-514 (Jan. 22, 1999).
Bower, C., et al., “Nucleation and growth of carbon nanotubes by microwave plasma chemical vapor deposition,” Applied Physics Letters, vol. 77, No. 17, pp. 2767-2769 (Oct. 23, 2000).
Dean, K., et al., “The environmental stability of field emission from single-walled carbon nanotubes,” Applied Physics Letters, vol. 75, No. 19, pp. 3017-2019 (Nov. 8, 1999).
Adachi, H., et al., “Stable carbide field emitter,” Appl. Phys. Lett., vol. 43, No. 7, pp. 702-703 (Oct. 1, 1993).
Huang, M., et al., “Room-Temperature Ultraviolet Nanowire Nanolasers,” Science, vol. 292, pp. 1897-1899 (Jun. 8, 2001).
Aggarwal, S., et al., “Spontaneous Ordering of Oxide Nanostructures,” Science, vol. 287, pp. 2235-2237 (Mar. 24, 2000).
Luo, Y., et al., “Nanoshell tubes of ferroelectric lead zirconate titanate and barium titanate,” Applied Physics Letters, vol. 83, No. 3, pp. 440-442 (Jul. 21, 2003).
Ren, Z.F., et al., “Synthesis of Large Arrays of Well-Aligned Carbon Nanotubes on Glass,” Science, vol. 282, pp. 1105-1107 (Nov. 6, 1998).
Bower, C., “Plasma-induced alignment of carbon nanotubes,” Applied Physics Letters, vol. 77, No. 6, pp. 830-832 (Aug. 7, 2000).
Merkulov, V., “Shaping carbon nanostructures by controlling the synthesis process,” Applied Physics Letters, vol. 79, No. 8, pp. 1178-1180 (Aug. 20, 2001).
Teo, K., et al., “Plasma enhanced chemical vapour deposition carbon nanotubes
anofibres-how uniform do they grow?,” Nanotechnology, vol. 14, pp. 204-211 (2003).
Mackie, W., et al., “Emission and Processing Requirements for Carbide Films on Mo Field Emitters,” Mat. Res. Soc. Symp. Proc., vol. 509, pp. 173-178 (1998).
Zhu et. al., “Large Current Density from Carbon Nanotube Field Emitters,” Applied Physics Letters, vol. 75, No. 6, pp. 873-875 (1999).
Betzig, E. et al., “Near-Field Optics: Microscopy, Spectroscopy, and Surface Modification Beyond the Diffraction Limit”, Science, vol. 257, pp. 189-195 (Jul. 10, 1992).
Cheng et al., “Bulk morphology and diameter distribution of single-walled carbon nanotubes synthesized by catalytic decomposition of hydrocarbons”, Chem. Physics Letters, vol. 289, pp. 602-610 (1998).
Andrews et al., Chem. Physics Letters, “Continuous production of aligned carbon nanotubes: a step closer to commercial realization”, vol. 303, pp. 464-474 (1999).
Jessensky, O. et al., “Self-organized formation of hexagonal pore arrays in anodic alumina”, Journal of Applied Physics, vol. 72, pp. 1173 (1998).
Li, A.P. et al., Journal of Applied Physics, vol. 84, No. 11 pp. 6023-6026 (1998).
Scott, A.W., Understanding Microwaves, Ch. 12, pp. 282-317 (1993).
Spindt, C.A. et al., “Field-Emitter-Array Development for High Frequency Operation,” J. Vac. Sci., Technol. B, vol. 11, pp. 468-473 (1993).
Kong, Y.C. et al., “Ultraviolet-emitting ZnO nanowires synthesized by a physical vapor deposition approach”, Applied Phys
Booth Richard A.
Lowenstein & Sandler PC
The Regents of the University of California
LandOfFree
Microscale vacuum tube device and method for making same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Microscale vacuum tube device and method for making same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Microscale vacuum tube device and method for making same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3540122