Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2008-11-06
2010-12-28
Dougherty, Thomas M (Department: 2837)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S042000, C438S045000, C438S051000, C310S309000
Reexamination Certificate
active
07858407
ABSTRACT:
A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening.
REFERENCES:
patent: 6448622 (2002-09-01), Franke et al.
patent: 6856217 (2005-02-01), Clark et al.
patent: 7625772 (2009-12-01), Casset et al.
patent: 2002/0189350 (2002-12-01), Tu
patent: 2003/0173611 (2003-09-01), Bertz et al.
patent: 2004/0209435 (2004-10-01), Partridge et al.
patent: 2008/0150647 (2008-06-01), Yang et al.
patent: 04-364380 (1992-12-01), None
patent: WO 02/17482 (2002-02-01), None
patent: WO 2004/027796 (2004-04-01), None
International Search Report from corresponding International Application No. PCT/FR2006/050078 filed Jan. 31, 2006.
Buschnakowski S et al: “Development and Characterisation of a High Aspect Ratio Vertical Fet Sensor for Motion Detection” Transducers 2003, 12th International Conference on Solid-State Sensors, Actuators and Microsystems, vol. 2, Jun. 9, 2003, pp. 1391-1394, XPOI0647614.
Abele Nicolas
Ancey Pascal
Bouche Guillaume
Casset Fabrice
Monfray Stéphane
Dougherty Thomas M
Jorgenson Lisa K.
McClelland William R.
Wolf Greenfield & Sacks P.C.
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