Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1991-08-29
1993-04-27
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 21, 257 53, 257 56, 257103, 257 73, 136261, 136258, 136249, 136254, H01L 2714
Patent
active
052065235
ABSTRACT:
A process is disclosed for producing microporous crystalline silicon which has a band-gap substantially increased relative to that of normal crystalline silicon. This process involves the preparation of quantum wires of silicon by means of a chemical attack method carried out on silicon that has been doped such that it conducts electricity substantially via the effective transport of electric charge by means of so-called holes. The microporous crystalline silicon thus produced is in the form of a discrete mass having a bulk-like, interconnected crystalline silicon structure of quantum wires whose band-gap is greater than normal crystalline silicon. Because of this increased band-gap this microporous crystalline silicon may be used as an active element in applications such as tandem solar cells.
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Goesele Ulrich M.
Lehmann Volker E.
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