Electric lamp and discharge devices – Discharge devices having a multipointed or serrated edge...
Patent
1997-01-07
1999-09-14
Patel, Vip
Electric lamp and discharge devices
Discharge devices having a multipointed or serrated edge...
313336, 313351, H01J 102
Patent
active
059527714
ABSTRACT:
A micropoint assembly is disclosed that includes a micropoint and a switch coupled to the micropoint. The switch is operable to activate and deactivate the micropoint and includes a nitride oxidation layer. The switch may be a MOSFET with a gate oxide that contains the nitride oxidation layer. In such configuration, the nitride oxidation layer contains the greatest concentration of SiN within the gate oxide. A method for constructing the micropoint assembly and field emission displays incorporating the micropoint assembly is also disclosed. Such method includes simultaneous annealing of the nitride oxidation layer during conventional FED fabrication steps.
REFERENCES:
patent: 3814968 (1974-06-01), Nathanson et al.
patent: 3970887 (1976-07-01), Smith et al.
patent: 3999209 (1976-12-01), Wrigley et al.
patent: 4042946 (1977-08-01), Sokoloski
patent: 4748131 (1988-05-01), Zietlow
patent: 5024722 (1991-06-01), Cathey, Jr.
patent: 5210472 (1993-05-01), Casper et al.
patent: 5212426 (1993-05-01), Kane
patent: 5219773 (1993-06-01), Dunn
patent: 5229331 (1993-07-01), Doan et al.
patent: 5329207 (1994-07-01), Cathey et al.
patent: 5344525 (1994-09-01), Cathey, Jr.
patent: 5354698 (1994-10-01), Cathey, Jr.
patent: 5357172 (1994-10-01), Lee et al.
patent: 5358908 (1994-10-01), Reinberg et al.
patent: 5372973 (1994-12-01), Doan et al.
patent: 5374868 (1994-12-01), Tjaden et al.
patent: 5387844 (1995-02-01), Browning
patent: 5391259 (1995-02-01), Cathey et al.
patent: 5410218 (1995-04-01), Hush
Claeys, C., Simoen, E., Vanhellemont J., "Radiation Hardening Studies of Silicon Technologies for Space Applications" Electron Technology, 27, 3/4, pp. 23-42 Warszawa 1994.
Dunn, G.J., Jayaraman, R., Yang, W., and Sodini, C.G., "Radiation effects in low pressure reoxidized oxide gate dielectrics", Appl. Phys, Lett. 52 (20), pp. 1713-1715, May 1988.
Lai, C., Lei, T., et al. "Post-Polysilicon Gate-Process-Induced Degradation on Thin Gate Oxide", IEEE Electron Device Letters, vol. 16, No. 11, Nov. 1995.
Viju, M.K., Maddox, R., Fazan, P. et al., "Degradation of Junction Leakage in Devices Subjected to Gate Oxidation in Nitrous Oxide", IEEE Electron Device Letters, vol. 13, No. 12, Dec. 1992.
Takashi, H., and Iwasaki, H., "Improved Hot-Carrier Immunity in Submicrometer MOSFET's with Reoxidized Nitrided Oxides Prepared by Rapid Thermal Processing", IEEE Electron Device Letters, vol. 10, No. 2, Feb. 1989, pp. 64-66.
Winokur, P.S., Sexton, F.W., Schwank, J.R., Fleetwood, D.M., Dressendorfer, P.V., Wrobel, T.F., and Turpin, D.C., "Total-Dose Radiation and Annealing Studies Implications for Hardness Assurance Testing", IEEE Transactions on Nuclear Science, vol. NS-33, No. 6, Dec. 1986, pp. 1343-1351.
Micro)n Technology, Inc.
Patel Vip
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