Micron gap thermal photovoltaic device and method of making...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal

Reexamination Certificate

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C438S057000, C438S064000, C438S066000, C438S069000

Reexamination Certificate

active

07977135

ABSTRACT:
A method of making a micron gap thermal photovoltaic device includes forming at least one standoff on a photovoltaic substrate, depositing a sacrificial layer on the photovoltaic substrate and about the standoff, forming an emitter attached to the standoff and having a lower planar surface separated from the photovoltaic substrate by the sacrificial layer, and removing the sacrificial layer to form a sub-micron gap between the photovoltaic substrate and the lower planar surface of the emitter.

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