Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal
Reexamination Certificate
2011-07-12
2011-07-12
Geyer, Scott B (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
C438S057000, C438S064000, C438S066000, C438S069000
Reexamination Certificate
active
07977135
ABSTRACT:
A method of making a micron gap thermal photovoltaic device includes forming at least one standoff on a photovoltaic substrate, depositing a sacrificial layer on the photovoltaic substrate and about the standoff, forming an emitter attached to the standoff and having a lower planar surface separated from the photovoltaic substrate by the sacrificial layer, and removing the sacrificial layer to form a sub-micron gap between the photovoltaic substrate and the lower planar surface of the emitter.
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DiMatteo Robert Stephen
Greiff Paul
Geyer Scott B
Iandiorio Teska & Coleman
The Charles Stark Draper Laboratory Inc.
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