Fishing – trapping – and vermin destroying
Patent
1987-11-27
1989-03-14
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437072, H01L 21316, H01L 21318, H01L 2132
Patent
active
048124184
ABSTRACT:
An electronic process is provided for creating a small dimensioned pattern in a semiconductor device. In one embodiment, the pattern functions to electrically separate two areas of the substrate by less than a micron. A lithographic mask which does not have to utilize dimensions as small as those being formed on the semiconductor device is used to form a predetermined pattern with at least one separation region by irradiating and developing a photoresist material. A layer of buffer material below the photoresist material reacts with a reactive ion etch to form a separation area with sloping sides comprised of polymer filaments produced from the reaction. The sloped sides of the separation region provide a separation dimension in the substrate of the semiconductor structure which is significantly smaller than a corresponding dimension required to be implemented on the lithographic mask.
REFERENCES:
patent: 4373965 (1983-02-01), Smigelski
patent: 4505026 (1985-03-01), Bohr et al.
patent: 4659427 (1987-04-01), Barry et al.
patent: 4692992 (1987-09-01), Hsu
patent: 4702795 (1987-10-01), Douglas
patent: 4707218 (1987-11-01), Giammarco et al.
patent: 4738683 (1988-04-01), Blanchard et al.
Dockrey J. William
Parrillo Louis C.
Pfiester James R.
Chaudhuri Olik
King Robert L.
Motorola Inc.
LandOfFree
Micron and submicron patterning without using a lithographic mas does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Micron and submicron patterning without using a lithographic mas, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Micron and submicron patterning without using a lithographic mas will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-893640