Microminiature semiconductor valve

Fluid handling – Flow affected by fluid contact – energy field or coanda effect – Means to regulate or vary operation of device

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357 6, 357 55, 357 56, 137831, 156644, H01L 4902, H01L 2984, H01L 2996, H01L 2906

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045816247

ABSTRACT:
A microminiature valve having a multilayer integral structure formed on a semiconductor substrate. The valve comprises a semiconductor substrate having inlet and outlet apertures and a raised valve seat. The substrate is overlayed with a nonporous top layer and an intermediate layer. The central portion of the intermediate layer is preferentially etched away to form an enclosed chamber connecting said inlet and outlet ports. The unetched portion of said intermediate layer peripherally supports said top layer above the valve seat. An electrically conductive electrode disposed on the unsupported portion of the top layer permits it to be electrostatically deflected to engage the valve seat and close the valve.

REFERENCES:
patent: 3936029 (1976-02-01), Brandt
patent: 4203128 (1980-05-01), Guckel et al.
patent: 4293373 (1981-10-01), Greenwood
Terry et al., "A Gas Chromatographic Air Analyzer Fabricated on a Silicon Wafer" IEEE Transactions on Electron Devices, vol. ED-26, No. 12, (Dec. 1979), pp. 1880-1886.
K. E. Petersen, "Dynamic Micromechanics on Silicon: Techniques and Devices" IEEE Transactions on Electron Devices, vol. ED-25, No. 10, (Oct. 1978), pp. 1241-1250.
J. B. Angell et al., "Silicon Micromechanical Devices," Scientific American, vol. 248, (1983), pp. 44-55.

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