Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2008-09-09
2008-09-09
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S250000, C438S089000
Reexamination Certificate
active
10304737
ABSTRACT:
This invention is related to a micromesh material and a mono-crystal high frequency capacitor manufactured with said micromesh material as well as the producing method for the mono-crystal high frequency capacitor, i.e., disperse a colloidal material unevenly to form a sub-micrometer ceramic cell structure to get a micromesh mono-crystal material on the basis of the theory of liquid-liquid phase transformation, and produce capacitors with the obtained material to enhance the high frequency characteristics of those capacitors with the micromesh mono-crystal structure (air medium) of dielectric ceramics.
REFERENCES:
patent: 6753277 (2004-06-01), Terashi
ABC Taiwan Electronics Corp.
Kamrath Alan
Kamrath & Associates PA
Nguyen Thinh T
Vu David
LandOfFree
Micromesh material and micromesh mono-crystal high frequency... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Micromesh material and micromesh mono-crystal high frequency..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Micromesh material and micromesh mono-crystal high frequency... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3950218