Micromechanical thermoelectric sensor element

Details Micromechanical thermoelectric sensor element Micromechanical thermoelectric sensor element

1983-07-06

1993-06-15

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Temperature

338 15, 338 18, 156647, H01L 2356, H01L 2714, H01L 2906

Patent

active

052201899

ABSTRACT:
A thermoelectric sensor element that is adapted to respond to thermal radiation is capable of manufacture into a sensor array on a single crystal semiconductor means, such as silicon. An anisotropically etched pit is provided under the sensing surface, and the pit generally corresponds to the geometry of the sensor element. The geometry is selected to be rectangular and falls along a selected orientation of the particular crystalline structure used for manufacture of the device to thereby allow for a high density of the sensor elements. The sensor elements are manufactured of two dissimilar metals in a sinuous pattern to provide the thermoelectric effect.

REFERENCES:
patent: 4317126 (1982-02-01), Gragg
patent: 4472239 (1984-09-01), Johnson et al.
Ernest Bassous, "Fabrication of Novel Three-Dimensional Microstructures by the Anisotropic Etching of (100) and (110) Silicon," IEEE Transactions on Electronics Devices, vol. Ed-25, No. 10, pp. 1178-1185 (Oct. 1978).
Kurt E. Petersen, "Dynamic Micromechanics on Silicon: Techniques and Devices," IEEE Transactions on Electronics Devices, vol. Ed-25, No. 10, pp. 1241-1249 (Oct. 1978).
James B. Angell, Stephen C. Terry, Phillip W. Barth, "Silicon Micromechanical Devices," Scientific American, pp. 44-55 (Apr. 1983).

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