Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Responsive to non-optical – non-electrical signal
Reexamination Certificate
1998-08-12
2001-04-10
Lee, Eddie C. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Responsive to non-optical, non-electrical signal
C257S253000, C257S254000, C257S417000, C257S418000, C257S419000, C257S420000
Reexamination Certificate
active
06215137
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a micromechanical sensor used for a scanning probe microscope and a method of making the same; and, in particular, to a micromechanical sensor suitable for a scanning thermal imaging microscope and a method of making the same.
2. Related Background Art
In recent years, scanning probe microscopes using physicochemical actions between a probe and a sample have been studied actively. In particular, scanning thermal imaging (STI) microscopes for measuring temperature distribution or thermal conductivity distribution in sample surfaces are considered to be promising as a technology for analyzing semiconductor operations or a technology for analyzing thermal characteristics of materials. An STI microscope developed by the inventor is disclosed in
Jpn. J. Appl. Phys
., Vol. 35 (1996), pp.L352-L354.
SUMMARY OF THE INVENTION
The micromechanical sensor of the present invention has a plurality of cantilever beams extending from a substrate. Each cantilever beam has a different resonance frequency. A cantilever needed for the aimed measurement is selected, and the unselected cantilevers are broken off and removed from the substrate upon use. The lower face of the substrate is provided with a bonding pad. The bonding pad is made of Au/NiCr or the like. The bonding pad is formed by the steps of initially placing a semiconductor mask over the lower face of the substrate with a space therebetween, and then depositing a bonding pad material onto the lower face of the cantilever beam by way of the semiconductor mask. The outer periphery of a wafer to be provided with the cantilever beam is formed with a positioning recess, and the outer periphery of the semiconductor mask is also formed with a positioning recess. A ball bearing or supporting pin is disposed between these positioning recesses so as to position the wafer and the semiconductor mask with respect to each other.
The present invention will be more fully understood from the detailed description given hereinbelow and the accompanying drawings, which are given by way of illustration only and are not to be considered as limiting the present invention.
Further scope of applicability of the present invention will become apparent from the detailed description given hereinafter. However, it should be understood that the detailed description and specific examples, while indicating preferred embodiments of the invention, are given by way of illustration only, since various changes and modifications within the spirit and scope of the invention will be apparent to those skilled in the art from this detailed description.
REFERENCES:
patent: 5116462 (1992-05-01), Bartha et al.
patent: 5614742 (1997-03-01), Gessner et al.
patent: 5619050 (1997-04-01), Uenoyama et al.
patent: 5629538 (1997-05-01), Lipphardt et al.
patent: 5635739 (1997-06-01), Grieff et al.
patent: 002249665 (1992-05-01), None
Yoshihiko Suzuki, “Jpn. J. Appl. Phys.”, 35, Novel Microcantilever for Scanning Thermal Imaging Microscopy, Mar. 1, 1996, pp. L352-L354, Part 2, No. 3A.
Hara Shinya
Suzuki Yoshihiko
Foley & Lardner
Lee Eddie C.
Nikon Corporation
Ortiz Edgardo
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