Micromechanical accelerometer and method of manufacture thereof

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437 7, 148DIG12, 7351432, 7351435, 7351436, H01L 2176

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active

055040322

ABSTRACT:
A high precision micromechanical accelerometer comprises a layered structure of five (5) semiconductor wafers insulated from one another by thin semiconductor material oxide layers. The accelerometer is formed by first connecting a coverplate and a baseplate to associated insulating plates. Counter-electrodes, produced by anisotropic etching from the respective insulating plates, are fixed to the coverplate and the baseplate respectively. The counter-electrodes are contactable through the cover or baseplate via contact windows. A central wafer contains a unilaterally linked mass (pendulum) that is also produced by anisotropic etching and which serves as a movable central electrode of a differential capacitor. The layered structure is hermetically sealed by semiconductor fusion bonding. A stepped gradation from the top is formed at a wafer edge region for attaching contact pads to individual wafers to permit electrical contacting of individual wafers. The invention permits fabrication of a .mu.B device characterized by extremely small leakage capacitances and high temperature stability.

REFERENCES:
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patent: 5006487 (1991-04-01), Stokes
patent: 5095401 (1992-03-01), Zavracky et al.
patent: 5095752 (1992-03-01), Suzuki et al.
patent: 5243861 (1993-09-01), Kloeck et al.
patent: 5352918 (1994-10-01), Thomas et al.
European Search Report also enclosed.

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