Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Packaging or treatment of packaged semiconductor
Patent
1998-01-23
2000-09-26
Picardat, Kevin M.
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Packaging or treatment of packaged semiconductor
438 22, 438 25, G01R 3126, H01L 2166
Patent
active
061241458
ABSTRACT:
Micromachining, etching and bonding techniques are employed to fabricate hermetically sealed gas-filled chambers from silicon and/or glass wafers. The hermetically sealed gas-filled chambers have precise dimensions and are filled with a preselected concentration of gas, thus rendering exceptional performance for use as an optical gas filter. The first step involves etching one or more cavities or holes in one or more glass or silicon wafers. These wafers eventually become part of a chip assembly having one or more hermetically sealed gas-filled chambers after appropriate bonding procedures. Interfaces between aligned silicon wafers are bonded using fusion bonding techniques whereas interfaces between silicon and glass wafers are bonded using anodic bonding techniques. Bonding is accomplished in an over-pressured gas-filled bonding environment that contains a selected concentration of gas which is maintained at the bonding temperature in order to encapsulate a precise concentration of the gas within the micromachined cavity.
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Kalvesten Edvard
Stemme Goran
Collins D. M.
Instrumentarium Corporation
Picardat Kevin M.
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