Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal
Reexamination Certificate
2001-04-12
2003-08-26
Meier, Stephen D. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
C257S421000
Reexamination Certificate
active
06611033
ABSTRACT:
FIELD OF THE INVENTION
This invention relates to the field of integrated circuit (IC) design. Specifically, it relates to a random access memory array having a plurality of micromachined electromechanical (MEM) memory cells, where each MEM memory cell includes an MEM switch and a capacitor. This invention also relates to a method of making the MEM random access memory (MEMRAM) array.
BACKGROUND OF THE INVENTION
Micromachined electromechanical (MEM) switches have been developed for light-emitting display applications. U.S. Pat. No. 6,037,719 issued on Mar. 14, 2000 to Yap et al. describes such MEM switches for controlling a plurality of light-emitting devices. Each MEM switch includes a cantilever beam and a control electrode spaced therefrom to deflect the cantilever beam electrostatically in order to close or open the switch.
FIG. 2 of U.S. Pat. No. 6,037,719 illustrates a matrix circuit element of a matrix-addressed display. For each light-emitting device, two switches
22
,
24
and one storage capacitor
38
are required. The two switches
22
,
24
comprise the MEM switch. The first switch
22
, called the driving switch, is used to control the current to drive the light-emitting device. Therefore, it determines the light emission intensity of the pixel.
The second switch
24
, called the gating switch, is used to control the on/off timing of the pixel. The state of the driving switch
22
is maintained by the storage capacitor
38
coupled to the gate of the driving switch
22
.
Since each matrix circuit element includes two switches, i.e., the MEM switch, and one storage capacitor, it is provided that a MEM random access memory (ME array can be designed having a plurality of MEM memory cells, where each MEM memory cell has an MEM switch and a capacitor.
It is also provided that a method can be implemented for fabricating each MEM memory cell of the MEMRAM array.
SUMMARY
An aspect of the present invention is to provide a random access memory array having a plurality of micromachined electromechanical (MEM) memory cells, where each MEM memory cell has an MEM switch and a capacitor.
Another aspect of the present invention is to provide a method for fabricating the MEM random access memory (MEMRAM) array.
Accordingly, a MEMRAM array is disclosed which includes a plurality of MEM memory cells, where each MEM memory cell has an MEM switch and a capacitor. The MEM switch includes a contact portion configured for moving from a first position to a second position for reading out a charge stored within the capacitor or for writing the charge to the capacitor. A preferred method is also disclosed for fabricating each MEM memory cell of the MEMRAM array.
REFERENCES:
patent: 5963788 (1999-10-01), Barron et al.
patent: 6037719 (2000-03-01), Yap et al.
patent: 6100109 (2000-08-01), Melzner et al.
Hsu Louis L.
Wang Li-Kong
Dilworth & Barrese LLP
IBM Corporation
Meier Stephen D.
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