Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal
Reexamination Certificate
2007-04-24
2007-04-24
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
C438S800000, C483S020000
Reexamination Certificate
active
11273827
ABSTRACT:
A method for fabricating a MEMS device comprises providing a substrate having a back side, a front side opposite to the back side and a periphery portion. A desired microstructure is formed on the back side of the substrate. The substrate is then supported for rotation. A precursor solution is deposited on the front side of the substrate during rotation so that a thin film layer may be formed thereon. During formation of the thin film layer, the substrate is supported and rotated that the microstructure formed on the back side is protected.
REFERENCES:
patent: 5962081 (1999-10-01), Ohman et al.
patent: 6093579 (2000-07-01), Sathe
patent: 6265750 (2001-07-01), Feng et al.
patent: 6612535 (2003-09-01), Tai et al.
He Xujiang
Shannigrahi Santiranjan
Yao Kui
Zhang Jian
Agency for Science Technology and Research
Coleman W. David
Hogan & Hartson LLP
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