Microlenses of CMOS image sensor and method for fabricating...

Details Microlenses of CMOS image sensor and method for fabricating... Microlenses of CMOS image sensor and method for fabricating...

2007-07-20

2009-12-29

Thai, Luan C (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S069000, C438S070000, C438S064000, C257SE33004

Reexamination Certificate

active

07638348

ABSTRACT:
A method of fabricating microlenses in a CMOS image sensor including at least one of the following steps: Forming a color filter array including a plurality of color filters on a semiconductor substrater. Forming on and/or over the color filter array a flattening layer to compensate for height differences between color filters. Forming a silicon oxide layer on and/or over the flattening layer. Forming on and/or over the silicon oxide layer, a plurality of photoresist patterns which correspond to the color filters, wherein the photoresist patterns may be separated from each other. Forming a plurality of CxFy-based polymer bumps surrounding the plurality of photoresist patterns using at least one process gas (e.g. C5F8, CH2F2, Ar, and/or O2). Etching the plurality of polymer bumps, the plurality of photoresist patterns, and the silicon oxide layer using an etching recipe having substantially the same etching selection ratio between the plurality of polymer bumps, the plurality of photoresist patterns, and the silicon oxide layer.

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patent: 2006/0012001 (2006-01-01), Kim

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