Microlens of CMOS image sensor and method of manufacturing...

Details Microlens of CMOS image sensor and method of manufacturing... Microlens of CMOS image sensor and method of manufacturing...

2007-10-09

2007-10-09

Andujar, Leonardo (Department: 2826)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S048000, C438S057000, C438S069000, C257SE31121

Reexamination Certificate

active

11319493

ABSTRACT:
A method of a microlens of a CMOS image sensor eliminates a flattened gap between the curvatures of adjacent microlenses. A plurality of color filter layers is formed on a semiconductor substrate on which a photodiode region, a gate electrode, an interlayer insulating layer, and a metal interconnection are formed. An overcoating layer is formed on the plurality of color filter layers. Microlenses are formed on the overcoating layer. The overcoating layer exposed by a gap between the microlenses is etched to form a gap at the boundary between the color filter layers in the overcoating layer. A flow process is performed such that curves of the microlenses extend to the gap.

REFERENCES:
patent: 2004/0147059 (2004-07-01), Jeong et al.
patent: 10-2002-0057277 (2002-07-01), None
patent: 10-2004-0095984 (2004-11-01), None

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