Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With thin active central semiconductor portion surrounded by...
Reexamination Certificate
2008-04-15
2008-04-15
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With thin active central semiconductor portion surrounded by...
C257SE29001, C250S281000, C250S286000, C250S287000, C313S348000, C438S459000, C438S977000
Reexamination Certificate
active
07358593
ABSTRACT:
A grid structure and method for manufacturing the same. The grid is used for gating a stream of charged particles in certain types of particle measurement instruments, such as ion mobility spectrometers and the like. The methods include various microfabrication techniques for etching and/or depositing grid structure materials on a silicon substrate.
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Collins Scott
Frederick Brian G.
LeGore Lawrence J.
Smith Rosemary
Hamilton Brook Smith & Reynolds P.C.
Rodela Eduardo A
Stillwater Scientific Instruments
Tran Minhloan
University of Maine
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