Microfabricated high aspect ratio device with an electrical isol

Details Microfabricated high aspect ratio device with an electrical isol Microfabricated high aspect ratio device with an electrical isol

1997-06-13

2000-09-19

Kincaid, Kristine

Electricity: conductors and insulators

Conduits, cables or conductors

Preformed panel circuit arrangement

H05K 100

Patent

active

06121552&

ABSTRACT:
A microfabricated device having a high vertical aspect ratio and electrical isolation between a structure region and a circuit region. The device may be fabricated on a single substrate and may include electrical interconnections between the structure region and the circuit region. The device includes a substrate and an isolation trench surrounding a structure region in the substrate. The isolation trench includes a lining of a dielectric insulative material. A plurality of electromechanical elements are located in the structure region and are laterally anchored to the isolation trench.

REFERENCES:
patent: 3725671 (1973-04-01), Keister et al.
patent: 3936329 (1976-02-01), Kendall et al.
patent: 3962052 (1976-06-01), Abbas et al.
patent: 4049903 (1977-09-01), Kobler
patent: 4063271 (1977-12-01), Bean et al.
patent: 4307507 (1981-12-01), Grey et al.
patent: 4369565 (1983-01-01), Muramatsu
patent: 4698900 (1987-10-01), Esquivel
patent: 4764644 (1988-08-01), Reisman et al.
patent: 4874484 (1989-10-01), Foell et al.
patent: 5084408 (1992-01-01), Baba et al.
patent: 5126810 (1992-06-01), Gotou
patent: 5131978 (1992-07-01), O'Neill
patent: 5198390 (1993-03-01), MacDonald et al.
patent: 5262021 (1993-11-01), Lehmann et al.
patent: 5271801 (1993-12-01), Valette
patent: 5326726 (1994-07-01), Tsang et al.
patent: 5343064 (1994-08-01), Spangler et al.
patent: 5445988 (1995-08-01), Schwalke
patent: 5447067 (1995-09-01), Biebl et al.
patent: 5504026 (1996-04-01), Kung
patent: 5506175 (1996-04-01), Zhang et al.
patent: 5576250 (1996-11-01), Diem et al.
patent: 5592015 (1997-01-01), Iida et al.
patent: 5719073 (1998-02-01), Shaw et al.
patent: 5747353 (1998-05-01), Bashir et al.
patent: 5747867 (1998-05-01), Oppermann
patent: 5798283 (1998-08-01), Montague et al.
patent: 5807783 (1998-09-01), Gaul et al.
patent: 5847280 (1998-12-01), Sherman et al.
patent: 5847454 (1998-12-01), Shaw et al.
patent: 5882532 (1999-03-01), Field et al.
C.H. Hsu et al., "Micromachined Structures Fabricated Using a Wafer-Bonded Sealed Cavity Process," Solid-State Sensor and Actuator Workshop Hilton Head, S.Caroline, Jun. 13-16, 1994, 151-155.
J. Mohan et al., "An Integrated Accelerometer as a Demonstration of a New Technology Using Silicon Fusion Bonding and Deep Reactive Ion Etching," Stanford University, Center for Integrated Systems, 21-22.
L. Parameswaran et al., "Sealed-Cavity Microstructure using Wafer Bonding Technology," The 7th International Conference on Solid-State Sensors and Actuators, 274-277.
L. Parmeswaran et al., "A Merged MEMS-CMOS Process using Silicon Wafer Bonding," IEEE 1995, 4 pgs.
K.A. Shaw et al., "Integrating Scream Micromachined Devices with Integrated Circuits," IEEE 1996, 44-49.
K.A. Shaw et al., "Scream I: a single mask, single-crystal silicon, reactive ion etching process for microelectromechanical structures", School of Electrical Engineering and National Nanofabrication Facility, Cornell University, Ithaca, NY 14853 (USA).
W. Lang et al., "Application of porous silicon as a sacrificial layer," 7th International Conference on Solid--State Sensors and Actuators Digest of Tech. Papers. pp. 202-205, Jun. 7-10, 1993.
Gianchandani et al., "Micron-Sized, High Aspect Ratio Bulk Silicon Micromechanical Devices," Micro Electro Mechanical Systems '92, 3 pgs., Feb. 4-7, 1992.
C. H. Hsu et al., "Micromachined Structures Fabricated Using A Wafer-Bonded Sealed Cavity Process," Solid-State sensor and Actuator Workshop Hilton Head, S.Caroline, Jun. 13-16, 1994, 151-155.
J. Mohan et al., "An Integrated Acceleometer as a demonstration of a New Technology Using Silicon Fusion Bonding and Deep Reactive Ion Etching, " Stanford University, Center for Integrated Systems, 21-22, 1996.
L. Parameswaren et al., "Sealed-Cavity Microstructure using Wafer Bonding Technology, " The 7th International Conference on Solid-State Sensors and Actuators, 274-277, 1993.
L. Parameswaren et al., "A Merged MEMS-CMOS Process using Silicon Wafer Bonding," IEEE 1995, 4 pgs.
K. A. Shaw et al., "Integrating Scream Micromachined devices with Integrated Circuits, " IEEE 1996, 44-49.
K. A. Shaw et al., "Scream I: A single mask, Single-crystal silicon, reactive ion etching process for microelectromechanical structures", School of Electrical Engineering and National Nanofabrication Facility, Cornell University, Ithaca, NY 14853 (USA), 1994.

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