Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2005-12-21
2008-11-25
Deo, Duy-Vu N (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S754000, C252S079100, C252S079200, C252S079300, C252S079400, C216S093000, C216S105000, C216S106000
Reexamination Certificate
active
07456114
ABSTRACT:
The present invention is directed to a microetching composition comprising a source of cupric ions, acid, a nitrile compound, and a source of halide ions. Other additive, including organic solvents, a source of molybdenum ions, amines, polyamines, and acrylamides may also be included in the composition of the invention. The present invention is also directed to a method of microetching copper or copper alloy surfaces to increase the adhesion of the copper surface to a polymeric material, comprising the steps of contacting a copper or copper alloy surface with the composition of the invention, and thereafter bonding the polymeric material to the copper or copper alloy surface.
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Castaldi Steven A.
Feng Kesheng
Kapadia Nilesh
Carmody & Torrance LLP
Deo Duy-Vu N
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