Microelectronic vacuum triode structure and method of fabricatio

Details Microelectronic vacuum triode structure and method of fabricatio Microelectronic vacuum triode structure and method of fabricatio

1995-03-10

1998-08-11

O'Shea, Sandra

Electric lamp and discharge devices

Discharge devices having a multipointed or serrated edge...

313495, 313351, H01J 2970

Patent

active

057931550

ABSTRACT:
An improved vacuum microelectronic device comprised of a first polysilicon layer having hornlike protrusions forming the emitter of the device, a first insulating layer separating the first polysilicon layer from a second polysilicon layer forming the grid of the device; a second insulating layer separating the second and third polysilicon layers. A portion of the first insulating layer, the second polysilicon layer, and second insulating layers are removed to form a grid aperture region positioned directly above the hornlike protrusion of the emitter. A cavity exists between the grid aperture region and a third polysilicon layer. The cavity is evacuated to form the vacuum region of the device.

REFERENCES:
patent: 3755704 (1973-08-01), Spindt et al.
patent: 5145438 (1992-09-01), Bol

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