Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1993-03-10
1994-03-01
Ngo, Ngan
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 32, 257 35, 257661, 505 1, H01L 3922, H01L 4902
Patent
active
052910350
ABSTRACT:
A microelectronic component comprising a crossover is provided comprising a substrate, a first high T.sub.c superconductor thin film, a second insulating thin film comprising SrTiO.sub.3 ; and a third high T.sub.c superconducting film which has strips which crossover one or more areas of the first superconductor film. An in situ method for depositing all three films on a substrate is provided which does not require annealing steps and which can be opened to the atmosphere between depositions.
REFERENCES:
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Clarke John
Kingston John J.
Wellstood Frederick C.
Ngo Ngan
The Regents of the University of California
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