Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-02-20
2007-02-20
Brewster, William M. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S458000, C257SE33046, C257SE33049
Reexamination Certificate
active
11035628
ABSTRACT:
A method of forming a high germanium concentration, low defect density silicon germanium film and its associated structures is described, comprising forming a dielectric layer on a substrate, patterning the dielectric layer to form a silicon region and at least one dielectric region, and forming a low defect silicon germanium layer on at least one dielectric region.
REFERENCES:
patent: 5525828 (1996-06-01), Bassous et al.
patent: 5659187 (1997-08-01), Legoues et al.
patent: 6784466 (2004-08-01), Chu et al.
patent: 2003/0203531 (2003-10-01), Schukin et al.
patent: 2004/0121507 (2004-06-01), Bude et al.
Zytkiewicz: Laterally Overgrown Structures as Substrates for Lattice Mismatched Epitaxy; Thin Solid Films 412 (2002); pp. 64-75.
Brewster William M.
Intel Corporation
Ortiz Kathy J.
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