Microelectronic structure having a hydrogen barrier layer

Details Microelectronic structure having a hydrogen barrier layer Microelectronic structure having a hydrogen barrier layer

2007-10-02

2007-10-02

Blackwell, Gwendolyn (Department: 1775)

Stock material or miscellaneous articles

Composite

Of inorganic material

C428S699000, C428S701000, C428S702000, C428S704000

Reexamination Certificate

active

10476579

ABSTRACT:
The invention relates to a microelectronic structure which provides improved protection of a hydrogen-sensitive dielectric against hydrogen contamination. According to the invention, the hydrogen sensitive dielectric (14) is covered at lest by an intermediate oxide (18), where material thickness is at lest five times the thickness of the hydrogen-sensitive dielectric. The intermediate oxide (18) simultaneously acts as an internal dielectric and is metabolized on its surface for this purpose. The intermediate oxide (18), which has a sufficient thickness absorbers the hydrogen that may be released during the deposition of a hydrogen barrier layer (22, 26), thus protecting the hydrogen-sensitive dielectric (14).

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Hong et al. “Protection of SrBi2Ta2O9ferroelectric capacitors from hydrogen damage by optimized metallization for memory applications” Apply. Physics Letters, vol. 77, No. 1, Jul. 2000, pp. 76-78.

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