Microelectronic remote switching circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

250211J, 307311, 307584, H03K 1712, H03K 17687, H03K 342, H03K 1778

Patent

active

042609089

ABSTRACT:
A high power microelectronic switching circuit is interfaced with a fiberoptic data link, whereby inductive or resistive loads up to 20 amperes are switched, with a forward voltage drop of less than one volt. An input signal of one-half milliwatt is passed to the gate of a V-MOS FET power device, which drives a PNP output transistor to switch a power supply to a circuit load.

REFERENCES:
patent: 3953748 (1976-04-01), Sugiura et al.
patent: 3958136 (1976-05-01), Schroeder
patent: 4065683 (1977-12-01), Clarke
patent: 4068135 (1978-01-01), Sonobe et al.
patent: 4121122 (1978-10-01), Porkrandt
patent: 4142684 (1979-03-01), Schweitzer
patent: 4143287 (1979-03-01), Biggs
MacLeod, "A Sequential Gate Generator Designed in VMOS", Electronic Engineering, pp. 24, 8/1977.
Evans et al., "Higher Power Ratings Extend V-MOS FET'S Dominion", Electronics, pp. 105-112, 6/22/78.
Jenkins, "Interface Circuits Drive High-Level Switches from Low-Level Inputs", Electronic Engineering, pp. 45-49, 5/1971.

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