Microelectronic process and structure

Details Microelectronic process and structure Microelectronic process and structure

2006-04-04

2006-04-04

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having air-gap dielectric

C438S421000, C438S619000

Reexamination Certificate

active

07022582

ABSTRACT:
The present invention relates to a process for integrating air as dielectric in semiconductor devices, comprising the steps of:a. applying a layer of a dielectric (2) which is to be patterned to a substrate (1);b. patterning the dielectric layer (2) which has been applied;c. applying a conductor metal (3) for the patterned dielectric layer (2) and forming a common surface from the conductor metal (3) and the dielectric (2);d. applying a layer of an organic dielectric (4) to the layer produced in step c.; ande. bringing the coated substrate produced in this way into contact with a fluorine-containing compound in order to form an arrangement which has air as dielectric between conductor structures and has a continuous dielectric layer (4) on the top side,and to a semiconductor device with air layers as dielectric produced using this process.

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