Microelectronic package with thermal access

Details Microelectronic package with thermal access Microelectronic package with thermal access

2010-04-14

2011-10-11

Zarneke, David (Department: 2891)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Metallic housing or support

C438S122000, C257SE21506

Reexamination Certificate

active

08034665

ABSTRACT:
A method of forming a microelectronic package including the steps of providing a three-layer metal plate, having a first layer, a second layer and a third layer. A plurality of conductive elements is formed from the first layer of the metal plate. A dielectric sheet is attached to the first layer of the metal plate, such that the dielectric sheet is remote from the third layer. A plurality of conductive features is then formed from the third layer of the metal plate which are also remote from the dielectric sheet. A microelectronic element is next electrically conducted to the conductive elements and a heat spreader is thermally connected the microelectronic element.

REFERENCES:
patent: 6011310 (2000-01-01), Naito et al.
patent: 6255740 (2001-07-01), Tsuji et al.
patent: 6258625 (2001-07-01), Brofman et al.
patent: 6716675 (2004-04-01), Waki et al.
patent: 6762118 (2004-07-01), Liu et al.
patent: 6902869 (2005-06-01), Appelt et al.
patent: 2005/0181655 (2005-08-01), Haba et al.

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