Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2004-08-19
2008-07-08
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S021000, C257S053000, C257S080000, C257S082000, C257S083000, C257S084000, C257S085000, C257S095000, C257S113000, C257S114000, C257S115000, C257S116000, C257S117000, C257S118000, C257S179000, C257S181000, C257S184000, C257S185000, C257S186000, C257S187000, C257S188000, C257S189000, C257S222000, C257S225000, C257S258000, C257S291000, C257S444000, C257S448000, C257S465000, C257S466000, C257S688000, C257S689000
Reexamination Certificate
active
07397066
ABSTRACT:
Microelectronic imagers with curved image sensors and methods for manufacturing curved image sensors. In one embodiment, a microelectronic imager device includes an imager die having a substrate, a curved microelectronic image sensor having a face with a convex and/or concave portion at one side of the substrate, and integrated circuitry in the substrate operatively coupled to the image sensor. The imager die can further include external contacts electrically coupled to the integrated circuitry and a cover over the curved image sensor.
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Micro)n Technology, Inc.
Soward Ida M
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