Microelectronic field emission device with breakdown inhibiting

Details Microelectronic field emission device with breakdown inhibiting Microelectronic field emission device with breakdown inhibiting

1994-02-22

1995-08-15

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Low workfunction layer for electron emission

257 11, 257632, 257635, 257649, 313309, 313310, 313336, 313351, H01J 1924, H01J 146, H01J 102

Patent

active

054421934

ABSTRACT:
A field emission device including an electron emitter and a peripherally disposed gate extraction electrode defining a free space region therebetween. The device has an insulating layer substantially isolating the gate extraction electrode from the free space region. The device prevents damaging arc discharge between the electron emitter and gate extraction electrode because of the improved insulation and provides an additional mechanism for electric field enhancement.

REFERENCES:
patent: 4987377 (1991-01-01), Gray et al.
patent: 5030895 (1991-07-01), Gray
patent: 5038070 (1991-08-01), Bardai et al.
patent: 5055077 (1991-10-01), Kane
patent: 5079476 (1992-01-01), Kane

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