Metal treatment – Compositions – Heat treating
Patent
1979-04-23
1980-08-19
Rutledge, L. Dewayne
Metal treatment
Compositions
Heat treating
148187, 357 23, 357 91, H01L 21265, H01L 2978
Patent
active
042182670
ABSTRACT:
A microelectronic fabrication process for minimizing the threshold voltage variation across the surface of a wafer of semiconductor material. The process precisely specifies the degenerate (or heavily doped) impurity profile distribution by using ion implantation so as to minimize the autodoping of adjacent gate regions immediately after the ion implantation step during gate oxidation, while maximizing the surface concentration of the dopant at the ultimate silicon surface to achieve appropriate surface sheet resistance and junction depth after all circuit fabrication steps have been completed.
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Runge, "Threshold Voltage--Impln. of Donors", Appl. Phys. 8 (1975) 43.
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Fischer et al., "--Si--MOSFETS--Implanted Channel", Solid St. Electronics, 22 (1979) 225.
Abbas et al., "Short Channel--Transistor", IBM--TDB, 17 (1975) 3263.
Bachand Richard A.
Hamann H. Fredrick
McGlynn Daniel R.
Rockwell International Corporation
Roy Upendra
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