Microelectronic fabrication having edge passivated bond pad...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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C257S530000

Reexamination Certificate

active

07067896

ABSTRACT:
Within an option selection device structure and a method for fabrication thereof there is formed a terminal metal layer and an option selection device at a co-planar level over a microelectronic substrate. The option selection device is passivated with: (1) a terminal metal passivation layer having an etch stop layer within its thickness; and (2) a bond pad passivation layer. There is simultaneously also formed through the bond pad passivation layer: (1) a via which accesses a bond pad formed contacting the terminal metal layer; and (2) an aperture over the option selection device which stops at the etch stop layer.

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Seta et al., “Semiconductor Device and Manufacturing Method Therefor,” English translation of published Japanese patent application No. JP 2001-274247 A, JPO, Oct. 2001.

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