Microelectronic diamond capacitive transducer

Details Microelectronic diamond capacitive transducer Microelectronic diamond capacitive transducer

1994-10-12

1995-09-26

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

257 77, 257417, 257419, 73718, 73721, 73724, 73727, 338 5, H01L 2984, H01L 2996

Patent

active

054536286

ABSTRACT:
A capacitive transducer includes a first electrically conductive layer, and a diamond diaphragm mounted opposite the first electrically conductive Layer so as to be moveable relative to the first electrically conductive layer. The first electrically conductive layer defines a first plate for the transducer, while the diaphragm defines the second plate for the transducer. In one embodiment of the transducer, the diamond layer is degeneratively doped providing the second plate. The microelectronic capacitive transducer preferably also includes an insulating layer on a face of the diamond layer adjacent the electrically conductive layer defining an overpressure stop for the transducer. The transducer includes absolute or differential pressure sensing embodiments. The microelectronic capacitive transducer may also be configured as an actuator. The diamond layer may be highly oriented diamond including semiconductor devices formed therein to provide signal conditioning. A fabrication method is also disclosed.

REFERENCES:
patent: 4706100 (1987-11-01), Tufte
patent: 4768011 (1988-08-01), Hattori et al.
patent: 5285084 (1994-02-01), von Windheim et al.
patent: 5362975 (1994-11-01), von Windheim et al.
patent: 5365789 (1994-11-01), Totterdell et al.
patent: 5391914 (1995-02-01), Sullivan et al.
Clark et al., Pressure Sensitivity in Anisotropically Etched Thin-Diaphragm Pressure Sensors, IEEE Transactions on Electron Devices, vol. Ed-26, No. 12 (1979), pp. 1887-1996.

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