Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2005-09-26
2008-09-09
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S003000, C257S004000, C257S005000
Reexamination Certificate
active
07423281
ABSTRACT:
The micro electronic device comprises a substrate with a surface and a plurality of storage elements in serial connection formed at the surface of the substrate, a plurality of transistors, each transistor being connected parallel to one of the plurality of storage elements. Each storage element comprises a storing material between a first electrode and a second electrode. A storing material provides at least two different storing states with different electrical properties. The first electrode comprises a first material and the second electrode comprises a second material different from the first material. The plurality of storage elements is oriented parallel to the surface of the substrate.
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Infineon - Technologies AG
Jackson Jerome
Patterson & Sheridan L.L.P.
Valentine Jami M
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