Microelectronic device patterned by ablating and...

Details Microelectronic device patterned by ablating and... Microelectronic device patterned by ablating and...

2011-04-12

2011-04-12

Mulpuri, Savitri (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257SE33037, C438S608000

Reexamination Certificate

active

07923837

ABSTRACT:
A microelectronic device includes a non-polymeric substrate, an organic interlayer, and a indium tin oxide layer formed on the organic interlayer; the indium tin oxide layer including an ablated feature within said indium tin oxide layer, wherein said indium tin oxide layer is formed by an indium tin oxide solution that is laser ablated prior to sintering.Applicant respectfully submits that the above amendments bring the Abstract into compliance with MPEP §608.01 (b). Accordingly, Applicant respectfully requests reconsideration and withdrawal of the objection to the abstract.

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patent: 7002292 (2006-02-01), Prakash
patent: 7134582 (2006-11-01), Bouten
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patent: 2006-114428 (2006-04-01), None
patent: WO 2006/129126 (2006-12-01), None

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