Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – Specified materials
Reexamination Certificate
2005-05-24
2005-05-24
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
Specified materials
C257S586000, C257S623000
Reexamination Certificate
active
06897540
ABSTRACT:
A microelectronic device fabricating method includes providing a substrate having a beveled portion and forming a layer of structural material on the beveled portion. Some of the structural material can be removed from the beveled portion by anisotropic etching to form a device feature from the structural material. The device feature can be formed on the beveled portion as with a pair of spaced, adjacent barrier material lines that are substantially void of residual shorting stringers extending therebetween. Structural material can be removed from the beveled portion to form an edge defined feature on a substantially perpendicular edge of the substrate. The beveled portion and perpendicular edge can be part of a mandril. The mandril can be removed from the substrate after forming the edge defined feature.
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Micro)n Technology, Inc.
Nguyen Cuong
Wells St. John P.S.
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