Microelectronic device chip including hybrid Au bump,...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads

Reexamination Certificate

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C257S738000, C257S778000

Reexamination Certificate

active

11226797

ABSTRACT:
A microelectronic device chip including a hybrid Au bump in which foreign materials are not generated in a probe tip in an electrical die sorting (EDS) test is provided. The microelectronic device chip includes a chip pad which is connected to a microelectronic device formed on a substrate and on which the microelectronic device is brought into electrical contact with the outside of the chip. Further, the microelectronic device chip includes a bump which is formed on the chip pad and made up of a composite layer including two or more layers.

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