Microelectronic device

Semiconductor device manufacturing: process – Having metal oxide or copper sulfide compound semiconductor...

Reexamination Certificate

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C438S151000, C438S158000

Reexamination Certificate

active

08058096

ABSTRACT:
A thin film transistor is manufactured by a process including forming an oxide semiconductor channel, patterning the oxide semiconductor channel with a photolithographic process, and exposing the patterned oxide semiconductor channel to an oxygen containing plasma.

REFERENCES:
patent: 5554547 (1996-09-01), Ha
patent: 7427776 (2008-09-01), Hoffman et al.
patent: 2002/0052059 (2002-05-01), Lyu
patent: 2006/0113539 (2006-06-01), Sano et al.
patent: 2006/0197092 (2006-09-01), Hoffman et al.
patent: 2007/0054507 (2007-03-01), Kaji et al.
patent: 2007/0075365 (2007-04-01), Mardilovich et al.
patent: 2007/0085847 (2007-04-01), Shishido
patent: 2008/0023703 (2008-01-01), Hoffman et al.
patent: 2008/0296568 (2008-12-01), Ryu et al.
patent: 2009/0035899 (2009-02-01), Herman et al.
patent: 2009/0166616 (2009-07-01), Uchiyama
patent: 2009/0289250 (2009-11-01), Hoffman et al.
patent: 2010/0090215 (2010-04-01), Lee

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