Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For high frequency device
Reexamination Certificate
2006-02-21
2006-02-21
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For high frequency device
C257S532000, C257S676000, C257S916000, C257S724000, C257S659000, C257S698000, C257S696000, C257S784000, C257S666000, C257S668000, C257S692000, C257S691000, C257S786000, C174S050510, C361S813000
Reexamination Certificate
active
07002249
ABSTRACT:
A semiconductor device package is disclosed which includes inter-digitated input and output bond wires configured to increase the negative mutual inductive coupling between the wires, thus reducing the overall parasitic inductance of the device. In one embodiment, the microelectronic component includes a semiconductor device coupled to a substrate, such as a lead frame, a first set of bond wires connected to the semiconductor device for providing current flow into the semiconductor device, and a second set of bond wires that are in a current loop with the first set of bond wires and are connected to the semiconductor device for providing current flow out of the semiconductor device, wherein the first and second set of bond wires are configured in an inter-digitated pattern to increase the magnitude of mutual inductive coupling between the first and second set of bond wires. In one embodiment, the semiconductor device comprises a single semiconductor chip and the lead frame comprises a Quad Flat No-Lead (QFN) lead frame. Other embodiments include multiple chips and/or multiple lead frames.
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Carroll Robert T.
Cote Kevin J.
Duffy Thomas P.
Golwalkar Suresh
Goodfellow John Ryan
Galanthay T. E.
Primarion, Inc.
Williams Alexander Oscar
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