Microelectronic component fabrication facility, and process for

Metal working – Barrier layer or semiconductor device making

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438800, 438908, H01L 2150, B01L 104

Patent

active

057953562

ABSTRACT:
A process for manufacturing microelectronic components that can be fabricated in a facility 1 including integrated circuits on silicon wafers, flat panel displays on glass substrates or any other microelectronic components fabricated in a similar fashion, a process of constructing the facility, and the facility. The fabrication facility 1 relies on a central hub 3 from which processing areas 2 extend out radially like spokes. The processing areas 2 are arranged in a pattern so as to be served by common services which include gases, chemicals, ultra pure water, vapor exhaust, liquid waste, air conditioning, centralized vacuum, centralized clean compressed air, hot water, steam, natural gas, power including emergency, conditioned, and unconditioned power, and process cooling water.

REFERENCES:
patent: 4592306 (1986-06-01), Gallego
patent: 4917556 (1990-04-01), Stark et al.
patent: 4923584 (1990-05-01), Bramhall, Jr. et al.
patent: 4951601 (1990-08-01), Maydan et al.
patent: 4985722 (1991-01-01), Ushijima
patent: 5067218 (1991-11-01), Williams
patent: 5076205 (1991-12-01), Vowles et al.
patent: 5135608 (1992-08-01), Okutani
patent: 5186718 (1993-02-01), Tepman et al.
patent: 5310410 (1994-05-01), Begin et al.
patent: 5344365 (1994-09-01), Scott et al.
patent: 5380682 (1995-01-01), Edwards et al.
patent: 5611655 (1997-03-01), Fukasawa et al.
Bader, Martin E., "Integrated Processing Equipment," Solid State Technology, pp. 149-154, May, 1990.
Circular Centered Single-Column Fab, Documentation III. 2001 Fab System,, Special Issue on 2001 Semiconductor Manufacturing, 5 pages. May 23, 1996, pp. 20-23.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Microelectronic component fabrication facility, and process for does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Microelectronic component fabrication facility, and process for , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Microelectronic component fabrication facility, and process for will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1111036

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.