Microelectronic circuit substrate structure including photoimage

Details Microelectronic circuit substrate structure including photoimage Microelectronic circuit substrate structure including photoimage

1994-09-12

1996-01-16

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257702, 257700, 257774, H01L 2348

Patent

active

054850380

ABSTRACT:
A High-Density-Multi-Chip (HDMI) substrate structure (10) includes alternating conductor metallization (24,28,36,54,56) and insulating dielectric layers (14,38). The dielectric layers (14,38) are formed by curtain coating of ultraviolet photoimageable epoxy material, and the metallization (24,28,36,54,56) is formed by electroless plating or sputtering of copper. The dielectric layers (14,38) are photoimaged and developed to form via holes (16,40,44), and vias (18,42,46) are formed in the holes (16,40,44) by electroless copper plating. The metallization (24,28,36,54,56) can be formed in the same manner as the dielectric layers (14,38), or can alternatively be formed by subtractive photolithography using photoresist masks.

REFERENCES:
patent: 4566186 (1986-01-01), Bauer et al.
patent: 5239448 (1993-08-01), Perkins et al.
"Thin Flim MCMs, Meeting Advanced CMOS Challenges", Advanced Packaging vol. 1, No. 1, 1992, pp. 46-51.
"Advanced Dispensing and Coating Technologyies for Polyimide Films", by T. Snodgrass et al, Proceedings Fourth DuPont Symposium on High Density Interconnect Technology, Oct. 1-3, 1991, pp. 267-278.
"Photoimageable Solder Masks Revisited", by K. Bullock, Electronic Packaging and Production, Jun. 1992, pp. 40-44.
"Metallic Coating of Plastics", by W. Goldie, vol. 1, Electrochemical Publication Ltd., Middelesex, England, 1968, pp. 59-73.

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