Microelectronic circuit structure including conductor bridges en

Details Microelectronic circuit structure including conductor bridges en Microelectronic circuit structure including conductor bridges en

1993-10-27

1995-04-11

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257763, 257781, 257770, 257276, H01L 2348, H01L 2946

Patent

active

054061229

ABSTRACT:
A gallium arsenide Monolithic-Microwave-Integrated-Circuit (MMIC) flip chip or other microelectronic circuit structure (10) includes a plated gold bridge (28) which serves as metal interconnect crossover between sites (24,-26) on a substrate (12). A first inorganic dielectric passivation layer (16), preferably of silicon dioxide, is formed under and supports the bridge (28). A second inorganic dielectric passivation layer (30), also preferably of silicon dioxide, is formed over and encapsulates the bridge (28) and the chip surface. A titanium/gold/titanium membrane (22) is formed under the bridge (28) to enable adhesion of the bridge (28) to the first passivation layer (16) and form plating contacts for the bridge (28). A contact bump post (38) is formed in a bump hole or via (32) which extends through the first and second passivation layers (16,30) to a bump contact site (34) on the substrate (12). Another titanium/gold/titanium membrane (40) is formed on the bump post (38) and the wall of the bump via (32) to provide a plating contact for a bump (42) which is plated on the membrane (40) inside the bump via (32) where the bump post (38) is located.

REFERENCES:
patent: 3668484 (1972-06-01), Greig et al.
patent: 4319258 (1982-03-01), Harnagel et al.
patent: 4417387 (1983-11-01), Heslop
"Flip Chip Manufacturing Technology for GaAs MMIC", by W. S. Wong et al., 1993 U.S. Conf. on GaAs Manufacturing Technology, May 1993, Atlanta, Ga.

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