Microelectronic ballistic transistor

Details Microelectronic ballistic transistor Microelectronic ballistic transistor

1992-01-27

1994-02-22

O'Shea, Sandra L.

Electric lamp and discharge devices

Discharge devices having three or more electrodes

Discharge control electrode

313309, H01J 1924, H01J 130

Patent

active

052890775

ABSTRACT:
A vacuum microelectronic transistor which can operate at a high speed and has a high mutual conductance. The vacuum microelectronic transistor comprises an emitter for emitting electrons therefrom, a collector for receiving electrons from the emitter, and a pair of gate electrodes for controlling arrival of electrons from the emitter to the collector. The emitter and collector are disposed in an encapsulated condition on a substrate such that electrons emitted from the emitter run straightforwardly in vacuum to the collector while the gate electrodes are located adjacent and across a route of such electrons from the emitter to the collector. Also, a process of manufacturing such vacuum microelectronic transistor is disclosed.

REFERENCES:
patent: 4307507 (1981-12-01), Gray et al.
patent: 4956574 (1990-09-01), Kane
patent: 5012153 (1991-04-01), Atkinson et al.
patent: 5030895 (1991-07-01), Gray
patent: 5144191 (1992-09-01), Jones et al.
Japanese Patent Abstract Publication No. JP62173754, Jan. 1988.

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