Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Patent
1994-11-04
1995-08-29
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
257426, 257427, 257623, 324252, H01L 2722, H01L 2982, H01L 2996, H01L 4300
Patent
active
054463076
ABSTRACT:
A pyramid shaped etch is made in an n or p type silicon substrate, or any symmetric etch with slanted edges, with p or n type implants in the slanted edges of the etch to form a PN junction. On this structure, an emitter and two collectors are formed by further implanting n+ regions in the PN junction region. To complete the device, ohmic contacts are formed to establish a base region. In operation, an appropriate bias is applied to the emitter through to the base and collectors. By so biasing the device, the device operates as a standard bipolar transistor. The currents of both the minority and majority carriers in the base region will respond to the component of the magnetic field perpendicular to the face of the slanted etch. As a result, there will be a difference in the currents in the collectors. These currents can then be simply calibrated to measure the magnetic field component. By forming similar sensors on 3 or 4 of the faces of the etched structure all three components of the magnetic field can be computed.
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Bates et al, "Integrated Semiconductor Magnetic Field Sensors," Proceedings f IEEE, vol. 74, p. 1107, 1986.
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Kordic et al, "Three Dimensional Magnetic Field Sensors", IEEE Transactions on Electronic Devices, vol. 35, p. 771, 1986.
Nathan et al, "The Hall Effect in Integrated Magnetotransistors", IEEE Transactions on Electronic Devices, vol. 36, p. 108, 1989.
Harvey James F.
Lux Robert A.
Mulford, Jr. Charles D.
Poli Louis C.
Anderson William H.
Mintel William
The United States of America as represented by the Secretary of
Zelenka Michael
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