Microelectromechanical systems structures and self-aligned...

Details Microelectromechanical systems structures and self-aligned... Microelectromechanical systems structures and self-aligned...

2011-07-12

2011-07-12

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S052000, C438S053000, C438S700000, C438S702000, C438S705000, C438S735000, C438S736000

Reexamination Certificate

active

07977136

ABSTRACT:
Disclosed are one-port and two-port microelectromechanical structures including variable capacitors, switches, and filter devices. High aspect-ratio micromachining is used to implement low-voltage, large value tunable and fixed capacitors, and the like. Tunable capacitors can move in the plane of the substrate by the application of DC voltages and achieve greater than 240 percent of tuning. Exemplary microelectromechanical apparatus comprises a single crystalline silicon substrate, and a conductive structure laterally separated from the single crystalline silicon substrate by first and second high aspect ratio gaps of different size, wherein at least one of the high aspect ratio gaps has an aspect ratio of at least 30:1, and is vertically anchored to the single crystalline silicon substrate by way of silicon nitride.

REFERENCES:
Tsai et al., “An isolated tunable capacitor with linear capacitance-voltage behavior,” Transducers 2003, Boston, MA, Jun. 2003, pp. 833-836.
McCormick et al., “Ultra-wide tuning range silicon MEMS capacitors on glass with tera-ohm isolation and low parasitics,” Transducers 2005, Seoul, Korea, Jun. 2005, pp. 1075-1079.
Ayazi et al., “High aspect-ratio combined poly and single-crystal silicon (HARPSS) MEMS technology,” IEEE Journal of Microelectromechanical Systems, vol. 9, pp. 288-294, Sep. 2000.
Monajemi et al., “A high-Q low-voltage HARPSS tunable capacitor,” IEEE IMS '05, Long Beach, CA, Jun. 2005, pp. 749-752.
Pourkamali et al., “High-Q single crystal silicon HARPSS capacitive beam resonators with sub-100-nm transduction gaps,” IEEE Journal of Microelectromechanical Systems, vol. 12, No. 4, pp. 487-496.

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