Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2008-02-04
2011-12-06
Williams, A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257SE23031, C257SE29324, C257SE21001, C257S098000, C257S418000, C257S660000, C257S690000, C257S419000, C324S686000, C361S283100, C361S278000, C361S287000, C438S113000
Reexamination Certificate
active
08072081
ABSTRACT:
A microelectromechanical system package includes a chip carrier, a first microelectromechanical system chip, a silicon cover, a layer of metal, a plurality of first bonding wires and a sealant. The first microelectromechanical system chip is positioned on the chip carrier and has an active surface, and an active area on the active surface. The layer of metal is formed on the upper surface of the cover. The first bonding wires electrically connect the active surface of the first microelectromechanical system chip to the chip carrier. The sealant is formed on the chip carrier to encapsulate the first microelectromechanical system chip and the first bonding wires.
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Advanced Semiconductor Engineering Inc.
Williams A
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