Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2006-07-25
2006-07-25
Lee, Hsien Ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S225000, C257S226000, C257S252000, C257S414000, C438S048000, C438S050000
Reexamination Certificate
active
07081647
ABSTRACT:
A microelectromechanical system includes a substrate, a transducer supported on the substrate and a conductor layer, which is also supported on the substrate and electrically connected to the transducer. The transducer includes a portion made of silicon or a silicon compound. The conductor layer is made of a refractory conductor, which includes, as its main ingredient, at least one element selected from the group consisting of copper, gold and silver. At least a portion of the conductor layer is located at an intermediate level between the silicon or silicon compound portion of the transducer and the substrate.
REFERENCES:
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patent: 2003/0034535 (2003-02-01), Barenburg et al.
Bustillo, et al., “Surface Micromachining for Microelectromechanical Systems”,Proceedings of the IEEE, vol. 86, No. 8, pp. 1552-1574 (Aug. 1998).
Liu, et al., “Effects of Ti Addition on the Morphology, Interfacial Reaction, and Diffusion of Cu and SiO2” ,J. Vac. Sci. Technol., vol. B 20, No. 6, pp. 2361-2366 (Nov./Dec. 2002).
Lakdawala, et al., “Micromachined High- Q Inductors in a 0.18-μm Copper Interconnect Low-K Dielectric CMOS Process”,IEEE Journal of Solid-State Circuits, vol. 37, No. 3, pp. 394-403 (Mar. 2002).
Akin Gump Strauss Hauer & Feld & LLP
Lee Hsien Ming
Matsushita Electric - Industrial Co., Ltd.
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