Microelectromechanical structure and a method for making the...

Etching a substrate: processes – Gas phase etching of substrate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C430S327000, C359S224200, C359S872000, C359S245000, C216S079000, C216S073000, C438S021000, C438S048000

Reexamination Certificate

active

07153443

ABSTRACT:
A microstructure and the method for making the same are disclosed herein. The microstructure has structural members, at least one of which comprises an intermetallic compound. In making such a microstructure, a sacrificial material is employed. After completion of forming the structural layers, the sacrificial material is removed by a spontaneous vapor phase chemical etchant.

REFERENCES:
patent: 3511727 (1970-05-01), Hays
patent: 4190488 (1980-02-01), Winters
patent: 4310380 (1982-01-01), Flamm et al.
patent: 4498953 (1985-02-01), Cook et al.
patent: 4551197 (1985-11-01), Guilmette et al.
patent: 4695700 (1987-09-01), Provence et al.
patent: 4740410 (1988-04-01), Muller et al.
patent: 4749440 (1988-06-01), Blackwood et al.
patent: 4789426 (1988-12-01), Pipkin
patent: 5206471 (1993-04-01), Smith
patent: 5262000 (1993-11-01), Welbourn et al.
patent: 5310626 (1994-05-01), Fernandes et al.
patent: 5330301 (1994-07-01), Brancher
patent: 5439553 (1995-08-01), Grant et al.
patent: 5441597 (1995-08-01), Bonne et al.
patent: 5506171 (1996-04-01), Leonard et al.
patent: 5534107 (1996-07-01), Gray et al.
patent: 5672242 (1997-09-01), Jen
patent: 5696619 (1997-12-01), Knipe et al.
patent: 5696620 (1997-12-01), Kim
patent: 5701192 (1997-12-01), Ji et al.
patent: 5702569 (1997-12-01), Park et al.
patent: 5716495 (1998-02-01), Butterbaugh et al.
patent: 5726480 (1998-03-01), Pister
patent: 5729074 (1998-03-01), Shiomi et al.
patent: 5753073 (1998-05-01), Jen
patent: 5757456 (1998-05-01), Yamazaki et al.
patent: 5757539 (1998-05-01), Min
patent: 5774256 (1998-06-01), Min et al.
patent: 5822109 (1998-10-01), Jeon
patent: 5835256 (1998-11-01), Huibers
patent: 5835293 (1998-11-01), Min et al.
patent: 5858065 (1999-01-01), Li et al.
patent: 5917045 (1999-06-01), Lewis et al.
patent: 5994750 (1999-11-01), Yagi
patent: 6020215 (2000-02-01), Yagi et al.
patent: 6051503 (2000-04-01), Bhardwaj
patent: 6104425 (2000-08-01), Kanno
patent: 6115172 (2000-09-01), Jeong
patent: 6126585 (2000-10-01), Norwood et al.
patent: 6159851 (2000-12-01), Chen et al.
patent: 6162367 (2000-12-01), Tai et al.
patent: 6197610 (2001-03-01), Toda
patent: 6203715 (2001-03-01), Kim et al.
patent: 6204080 (2001-03-01), Hwang
patent: 6238581 (2001-05-01), Hawkins et al.
patent: 6277173 (2001-08-01), Sadakata et al.
patent: 6290864 (2001-09-01), Patel et al.
patent: 6299724 (2001-10-01), Fayfield et al.
patent: 6328801 (2001-12-01), Gary et al.
patent: 6334928 (2002-01-01), Sekine et al.
patent: 6355181 (2002-03-01), McQuarrie
patent: 6396619 (2002-05-01), Huibers et al.
patent: 6409876 (2002-06-01), McQuarrie et al.
patent: 6436229 (2002-08-01), Tai et al.
patent: 6449079 (2002-09-01), Herrmann
patent: 6479920 (2002-11-01), Lal et al.
patent: 6500356 (2002-12-01), Goto et al.
patent: 6518194 (2003-02-01), Winningham et al.
patent: 6558559 (2003-05-01), Becker et al.
patent: 6576489 (2003-06-01), Leung et al.
patent: 6666979 (2003-12-01), Chinn et al.
patent: 6740247 (2004-05-01), Han et al.
patent: 6849471 (2005-02-01), Patel et al.
patent: 6913942 (2005-07-01), Patel et al.
patent: 2001/0002663 (2001-06-01), Tai et al.
patent: 2002/0033229 (2002-03-01), Lebouitz et al.
patent: 2002/0047172 (2002-04-01), Reid
patent: 2002/0121502 (2002-09-01), Patel et al.
patent: 2002/0163051 (2002-11-01), Gopal et al.
patent: 2002/0164879 (2002-11-01), Leung et al.
patent: 2002/0185699 (2002-12-01), Reid
patent: 2002/0195423 (2002-12-01), Patel et al.
patent: 2002/0196524 (2002-12-01), Huibers et al.
patent: 2003/0054588 (2003-03-01), Patel et al.
patent: 2003/0071015 (2003-04-01), Chinn et al.
patent: 2003/0073302 (2003-04-01), Huibers
patent: 2003/0077878 (2003-04-01), Kumar et al.
patent: 2003/0080082 (2003-05-01), Chinn et al.
patent: 2003/0124848 (2003-07-01), Chinn et al.
patent: 2003/0166342 (2003-09-01), Chinn et al.
patent: 2003/0219986 (2003-11-01), Rattner et al.
patent: 2004/0035821 (2004-02-01), Doan et al.
patent: 2004/0069747 (2004-04-01), Patel et al.
patent: 2004/0165250 (2004-08-01), Aubuchon
patent: 0704884 (1996-04-01), None
patent: 0822582 (1998-02-01), None
patent: 0822584 (1998-04-01), None
patent: 0838839 (1998-04-01), None
patent: 0878824 (1998-11-01), None
patent: 0955668 (1999-11-01), None
patent: 0878824 (2000-01-01), None
patent: 1982/57098679 (1982-06-01), None
patent: 1983/58130529 (1983-08-01), None
patent: 1985/60057938 (1985-04-01), None
patent: 1986/61053732 (1986-03-01), None
patent: 1986/61134019 (1986-06-01), None
patent: 1986/61181131 (1986-08-01), None
patent: 1986/61187238 (1986-08-01), None
patent: 1986/61270830 (1986-12-01), None
patent: 1987/62071217 (1987-04-01), None
patent: 1988/63155713 (1988-06-01), None
patent: 1989/01208834 (1989-08-01), None
patent: 1989/10217921 (1989-08-01), None
patent: 1990/02250323 (1990-10-01), None
patent: 1991/03012921 (1991-01-01), None
patent: 1992/04096222 (1992-03-01), None
patent: 1995/07029823 (1995-01-01), None
patent: 1997/09251981 (1997-09-01), None
patent: 1998/10313128 (1998-11-01), None
patent: 1998/10317169 (1998-12-01), None
patent: WO-98/05605 (1998-02-01), None
patent: WO-98/13856 (1998-04-01), None
patent: WO-98/32163 (1998-07-01), None
patent: WO-99/01887 (1999-01-01), None
patent: WO-99/03313 (1999-01-01), None
patent: WO-99/49506 (1999-09-01), None
patent: WO-00/52740 (2000-08-01), None
Aliev et al., “Development of Si(100) Surface Roughness at the Initial Stage of Etching in F2 and XeF2 Gases Ellipsometric Study”, Surface Science 442 (1999), pp. 206-214.
Glidemeister, J.M., “Xenon Difluoride Etching System” (Nov. 17, 1997).
Habuka et al., “Dominant Overall Chemical Reaction in a Chlorine Trifluoride-Silicon-Nitrogen System at Atmospheric Pressure”, Japan Journal of Applied Physics vol. 38 (1999), pp. 6466-6469.
Hecht et al., “A Novel X-ray Photoelectron Spectroscopy Study of the Al/SiO2 Interface”, J. Appl. Phys. vol. 57 (Jun. 15, 1985), pp. 5256-5261.
Houle, F.A., “Dynamic of SiF4 Desorption During Etching of Silicon by XeF2”, IBM Almaden Research Center (Apr. 15, 1987), pp. 1866-1872.
Flamm et al., “XeF2 and F-Atom Reactions with Si: Their Significance for Plasma Etching”, Solid State Technol. 26, 117 (1983).
Ibbotson et al., “Plasmaless Dry Etching of Silicon with Fluorine-containing Compounds”, J. Appl. Phys. vol. 56 No. 10 (Nov. 1984), pp. 2939-2942.
Ibbotson et al., “Comparison of XeF2 and F-atom Reactions with Si and SiO2”, Applied Physics Letter, vol. 44, 1129 (1984).
Streller et al., “Selectivity in Dry Etching of Si (100) and XeF2 and VUV Light”, Elsevier Science B.V., Applied Surface Science vol. 106 (1996), pp. 341-346.
Vugts et al., “Si/XeF2 Etching: Temperature Dependence”, J. Vac. Sci. Technol. A 14(5) (Sep./Oct. 1996), pp. 2766-2774.
Y.K. Fang, et al., The Compatibility of Aluminun Layers on Plasma-Deposited W and WSi2 Films, , 1988 IEEE, IEEE Transactions on Electron Devices, vol. 35, No. 5, May 1988.
Winters, H.F., “Etch Products from the Reaction of XeF2 with SiO2, SiO3, Si3N4, SiC, and Si in the Presence of Ion Bombardment”, J. Vac. Sci. Technol. B 1(4) (Oct./Dec. 1983), pp. 927-931.
Winters et al., “The Etching of Silicon with XeF2 Vapor”, Appl. Phys. Letter, vol. 34(1) (Jan. 1, 1979), pp. 70-73.
XACTIX, Inc., Marketing Brochure (Jun. 27, 1999).
“Xenon Difluoride Isotropic Etch System: Seeing is Believing”, Surface Technology Systems Ltd. brochure, Newport, UK date unknown.
Assorted promotional literature, Surface Technology Systems Ltd., Newport, UK (Jul. 28, 1999).
Kurt Williams, Etch Rates for Micromachining Processing-Part II, 2003 IEEE, pp. 761-778, Journal of Microelectromechanical Systems, vol. 12, No. 6, Dec. 2003.
G.J. van Gurp, et al., Aluminum-silicide reactions. il. Diffusion, compound formation, and microstructure, 1979 American Institute of Physics, pp. 6915-6922.
J. Baglin, et al., An Alternative marker experiment in the formation of Mo and W silicides, 1978 American Institute of Physics. pp. 289-290.
M. Bartur, et al., Electrical

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Microelectromechanical structure and a method for making the... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Microelectromechanical structure and a method for making the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Microelectromechanical structure and a method for making the... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3700079

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.