Microelectromechanical device and method for producing it

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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C438S055000, C438S445000

Reexamination Certificate

active

07084502

ABSTRACT:
A microelectromechanical device and a method for producing it having at least one layer on a substrate, in particular a thermoelectric layer on a substrate, the thermal expansion coefficient of the at least one layer and the thermal expansion coefficient of the substrate differing greatly. The at least one layer is coupled to at least one stress reduction means for the targeted reduction of lateral mechanical stresses present in the layer. This achieves a stress-free layer or enables stress-free growth.

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patent: 6410840 (2002-06-01), Sudo et al.
patent: 2001/0009800 (2001-07-01), Hijzen et al.
patent: 2002/0053359 (2002-05-01), Harman et al.
patent: 2002/0158281 (2002-10-01), Goldbach et al.
patent: 2003/0006470 (2003-01-01), Franson et al.
patent: 198 45 104 (2000-04-01), None
patent: 101 11 185 (2002-06-01), None
patent: 1079445 (2001-02-01), None

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