Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-08-01
2006-08-01
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C438S055000, C438S445000
Reexamination Certificate
active
07084502
ABSTRACT:
A microelectromechanical device and a method for producing it having at least one layer on a substrate, in particular a thermoelectric layer on a substrate, the thermal expansion coefficient of the at least one layer and the thermal expansion coefficient of the substrate differing greatly. The at least one layer is coupled to at least one stress reduction means for the targeted reduction of lateral mechanical stresses present in the layer. This achieves a stress-free layer or enables stress-free growth.
REFERENCES:
patent: 5547598 (1996-08-01), Amano et al.
patent: 6410840 (2002-06-01), Sudo et al.
patent: 2001/0009800 (2001-07-01), Hijzen et al.
patent: 2002/0053359 (2002-05-01), Harman et al.
patent: 2002/0158281 (2002-10-01), Goldbach et al.
patent: 2003/0006470 (2003-01-01), Franson et al.
patent: 198 45 104 (2000-04-01), None
patent: 101 11 185 (2002-06-01), None
patent: 1079445 (2001-02-01), None
Böttner Harald
Jagle Martin
Nurnus Joachim
Schubert Axel
Dickstein Shapiro Morin & Oshinsky LLP.
Flynn Nathan J.
Fraunhofer - Gesellschaft zur Forde - rung der angewandten Forsc
Infineon - Technologies AG
Sandvik Benjamin P.
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