Liquid crystal cells – elements and systems – Particular structure – Having significant detail of cell structure only
Reexamination Certificate
2006-04-18
2006-04-18
Parker, Kenneth (Department: 2815)
Liquid crystal cells, elements and systems
Particular structure
Having significant detail of cell structure only
C349S038000, C349S043000, C349S051000
Reexamination Certificate
active
07030952
ABSTRACT:
A plurality of active areas are defined on a semiconductor substrate. Then at least one gate is formed on the semiconductor substrate to cover a portion of the active area. Thereafter a plurality of source/drain are formed in the active area not covered by the gate followed by forming a first dielectric layer on the semiconductor substrate to cover the gate and the source/drain. After that, at least one pixel cap top plate is formed atop the first dielectric layer and a capacitor dielectric layer is formed atop the surface of the top plate. Finally, at least one pixel cap bottom plate is formed atop the first dielectric layer to cover the top plate.
REFERENCES:
patent: 6118506 (2000-09-01), Yamazaki et al.
patent: 6313481 (2001-11-01), Ohtani et al.
patent: 6677613 (2004-01-01), Yamazaki et al.
Chang Kuang-Yeh
Kuo Kuo-Yun
Hsu Winston
United Microelectronics Corp.
Warren Matthew E.
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